Patent details

Basic Information

Publication number:

EP2652874

PCT Application Number:

US2011064980

Type:

European Patent Granted for LU

Legal Status:

Lapsed

Application number:

EP118138445

PCT Publication Number:

WO2012082944

First applicant's nationality:

Translation Language:

EPO Publication Language:

English

English Title of Invention:

PRE-EMPHASIS TECHNIQUE FOR ON-CHIP VOLTAGE-DRIVEN SINGLE-ENDED-TERMINATION DRIVERS

French Title of Invention:

TECHNIQUE DE PRÉACCENTUATION POUR CIRCUITS D'ATTAQUE À TERMINAISON ASYMÉTRIQUE COMMANDÉS EN TENSION SUR PUCE

German Title of Invention:

PRÄEEMPHASEVERFAHREN FÜR ON-CHIP-SPANNUNGSGESTEUERTE TREIBER MIT ASYMMETRISCHER TERMINIERUNG

SPC Number:

Dates

Filing date:

14/12/2011

Grant date:

14/08/2019

EP Publication Date:

23/10/2013

PCT Publication Date:

21/06/2012

Claims Translation Received Date:

Translations Received Date (B1 EP Publication):

Translations Received Date (B2 EP Publication):

Translations Received Date (B3 EP Publication):

Publication date:

14/08/2019

EP B1 Publication Date:

14/08/2019

EP B2 Publication Date:

EP B3 Publication Date:

Lapsed date:

14/12/2019

Expiration date:

14/12/2031

Renunciation date:

Revocation date:

Annulment date:

Owner

From:

07/08/2019

 

 

Name:

Qualcomm Incorporated

Address:

5775 Morehouse Drive, San Diego, CA 92121, United States (US)

Inventor

Name:

MAAROUF, Fares, K.

Address:

United States (US)

Priority

Priority Number:

968190

Priority Date:

14/12/2010

Priority Country:

United States (US)

Classification

IPC classification:

H03K 19/003; H03K 19/0185; H04L 25/02;

Publication

European Patent Bulletin

Issue number:

201933

Publication date:

14/08/2019

Description:

Grant (B1)

Annual Fees

Annual Fee Due Date:

Annual Fee Number:

Expected Payer:

Last Annual Fee Payment Date:

Last Annual Fee Paid Number:

Payer:

Filing date	Document type	Number of pages