Patent details

EP2816607 Title: Field effect transistor using amorphous oxide film as channel layer

Basic Information

Publication number:
EP2816607
PCT Application Number:
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP141848895
PCT Publication Number:
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
Field effect transistor using amorphous oxide film as channel layer
French Title of Invention:
Transistor à effet de champ comprenant un film d'oxyde amorphe en tant que couche de canal
German Title of Invention:
Feldeffektransistor mit einem amorphen Oxidfilm als Kanalschicht
SPC Number:

Dates

Filing date:
05/09/2006
Grant date:
15/11/2017
EP Publication Date:
24/12/2014
PCT Publication Date:
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
15/11/2017
EP B1 Publication Date:
15/11/2017
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
05/09/2018
Expiration date:
05/09/2026
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
08/11/2017
 
 

Name:
Canon Kabushiki Kaisha
Address:
30-2 Shimomaruko 3-chome Ohta-ku, Tokyo 146-8501, Japan (JP)

Inventor

Name:
Iwasaki, Tatsuya
Address:
Japan (JP)

Priority

1

Priority Number:
2005258263
Priority Date:
06/09/2005
Priority Country:
Japan (JP)

2

Priority Number:
2006221552
Priority Date:
15/08/2006
Priority Country:
Japan (JP)

Classification

IPC classification:
H01L 29/66; H01L 29/786;

Publication

European Patent Bulletin

Issue number:
201746
Publication date:
15/11/2017
Description:
Grant (B1)

Annual Fees

Annual Fee Due Date:
Annual Fee Number:
Expected Payer:
Last Annual Fee Payment Date:
Last Annual Fee Paid Number:
Payer:
Filing date Document type Number of pages
30/01/2019 Outgoing Correspondence 1