Patent details

EP3358604 Title: TUNNEL FIELD EFFECT TRANSISTOR

Basic Information

Publication number:
EP3358604
PCT Application Number:
JP2016078393
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP168515005
PCT Publication Number:
WO2017057329
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
TUNNEL FIELD EFFECT TRANSISTOR
French Title of Invention:
TRANSISTOR À EFFET DE CHAMP ET À EFFET TUNNEL
German Title of Invention:
TUNNELFELDEFFEKTTRANSISTOR
SPC Number:

Dates

Filing date:
27/09/2016
Grant date:
07/08/2024
EP Publication Date:
08/08/2018
PCT Publication Date:
06/04/2017
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
07/08/2024
EP B1 Publication Date:
07/08/2024
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
27/09/2024
Expiration date:
27/09/2036
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
31/07/2024
 
 

Name:
Japan Science and Technology Agency
Address:
4-1-8, Honcho, Kawaguchi-shi,, Saitama 332-0012, Japan (JP)

Inventor

1

Name:
FUKUI, Takashi
Address:
Japan (JP)

2

Name:
TOMIOKA, Katsuhiro
Address:
Japan (JP)

Priority

Priority Number:
2015193196
Priority Date:
30/09/2015
Priority Country:
Japan (JP)

Classification

IPC classification:
H01L 29/778; H01L 29/739; B82Y 10/00; H01L 29/205; H01L 29/423; H01L 29/06; H01L 21/331; H01L 21/336;

Publication

European Patent Bulletin

Issue number:
202432
Publication date:
07/08/2024
Description:
Grant (B1)

Annual Fees

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