Patent details

Basic Information

Publication number:

EP2763319

PCT Application Number:

Type:

European Patent Granted for LU

Legal Status:

Lapsed

Application number:

EP141531111

PCT Publication Number:

First applicant's nationality:

Translation Language:

EPO Publication Language:

English

English Title of Invention:

SHORT CIRCUIT PROTECTION CIRCUIT AND METHOD FOR INSULATED GATE BIPOLAR TRANSISTOR

French Title of Invention:

CIRCUIT DE PROTECTION CONTRE LES COURT-CIRCUITS ET MÉTHODE POUR UN TRANSISTOR BIPOLAIRE À GRILLE ISOLÉE

German Title of Invention:

KURZSCHLUSSSCHUTZSCHALTUNG UND VERFAHREN FÜR EINEN BIPOLAREN TRANSISTOR MIT ISOLIERTEM GATE

SPC Number:

Dates

Filing date:

29/01/2014

Grant date:

30/08/2017

EP Publication Date:

06/08/2014

PCT Publication Date:

Claims Translation Received Date:

Translations Received Date (B1 EP Publication):

Translations Received Date (B2 EP Publication):

Translations Received Date (B3 EP Publication):

Publication date:

30/08/2017

EP B1 Publication Date:

30/08/2017

EP B2 Publication Date:

EP B3 Publication Date:

Lapsed date:

29/01/2018

Expiration date:

29/01/2034

Renunciation date:

Revocation date:

Annulment date:

Owner

From:

30/08/2017

 

 

Name:

General Electric Company

Address:

1 River Road, Schenectady, NY 12345, United States (US)

Inventor

1

Name:

Wu, Tao

Address:

China (CN)

2

Name:

Zhang, Yingqi

Address:

China (CN)

3

Name:

Zhang, Fan

Address:

China (CN)

Priority

Priority Number:

201310046177

Priority Date:

05/02/2013

Priority Country:

China (CN)

Classification

IPC classification:

H03K 17/082; H03K 17/10;

Publication

European Patent Bulletin

Issue number:

201735

Publication date:

30/08/2017

Description:

Grant (B1)

Annual Fees

Annual Fee Due Date:

Annual Fee Number:

Expected Payer:

Last Annual Fee Payment Date:

Last Annual Fee Paid Number:

Payer:

Filing date	Document type	Number of pages
31/05/2018	Outgoing Correspondence	1