Patent details

EP1186053 Title: SiC field-effect transistor and use thereof as gas sensor

Basic Information

Publication number:
EP1186053
PCT Application Number:
PCT/SE/2000/000773
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP009280595
PCT Publication Number:
WO/2000/065660
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
SiC field-effect transistor and use thereof as gas sensor
French Title of Invention:
Transistor à effet de champ en SiC et utilisation de celui-ci comme détecteur de gaz
German Title of Invention:
SiC-Feldeffekttransistor und Verwendung desselben als Gassensor
SPC Number:

Dates

Filing date:
20/04/2000
Grant date:
30/12/2009
EP Publication Date:
30/12/2009
PCT Publication Date:
02/11/2000
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
13/03/2002
EP B1 Publication Date:
30/12/2009
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
20/04/2010
Expiration date:
20/04/2020
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
20/04/2000
 
 

Name:
Cree Sweden AB
Address:
Österögatan 3, 164 40 Kista, Sweden (SE)

Inventor

1

Name:
KONSTANTINOV Andrei
Address:
Sweden (SE)

2

Name:
HARRIS Christopher
Address:
Sweden (SE)

3

Name:
SAVAGE Susan
Address:
Sweden (SE)

Priority

Priority Number:
9901440
Priority Date:
22/04/1999
Priority Country:
Sweden (SE)

Classification

Main IPC Class:
H01L 29/78;
Filing date Document type Number of pages