Patent details
EP1356509 Title: STRUCTURAL REINFORCEMENT OF HIGHLY POROUS LOW K DIELECTRIC FILMS BY CU DIFFUSION BARRIER STRUCTURES
Basic Information
- Publication number:
- EP1356509
- PCT Application Number:
- PCT/US/2001/050808
- Type:
- European Patent Granted for LU
- Legal Status:
- Lapsed
- Application number:
- EP019916048
- PCT Publication Number:
- WO/2002/050894
- First applicant's nationality:
- Translation Language:
- EPO Publication Language:
- English
- English Title of Invention:
- STRUCTURAL REINFORCEMENT OF HIGHLY POROUS LOW K DIELECTRIC FILMS BY CU DIFFUSION BARRIER STRUCTURES
- French Title of Invention:
- RENFORCEMENT STRUCTUREL DE FILMS DIELECTRIQUES FORTEMENT POREUX ET A FAIBLE CONSTANTE DIELECTRIQUE PAR DES STRUCTURES A EFFET DE BARRIERE A LA DIFFUSION DU CUIVRE
- German Title of Invention:
- STRUKTURELLE VERSTÄRKUNG VON HOCHPORÖSEN SCHICHTEN MIT NIEDRIGER DIELEKTRIZITÄTSKONSTANTE DURCH KUPFER-DIFFUSIONSBARIERE-STRUKTUREN
- SPC Number:
Dates
- Filing date:
- 18/12/2001
- Grant date:
- 24/10/2012
- EP Publication Date:
- 24/10/2012
- PCT Publication Date:
- 27/06/2002
- Claims Translation Received Date:
- Translations Received Date (B1 EP Publication):
- Translations Received Date (B2 EP Publication):
- Translations Received Date (B3 EP Publication):
- Publication date:
- 29/10/2003
- EP B1 Publication Date:
- 24/10/2012
- EP B2 Publication Date:
- EP B3 Publication Date:
- Lapsed date:
- 18/12/2012
- Expiration date:
- 18/12/2021
- Renunciation date:
- Revocation date:
- Annulment date:
Owner
- From:
- 18/12/2001
- Name:
- Intel Corporation
- Address:
- 2200 Mission College Boulevard, Santa Clara, CA 95052, United States (US)
Inventor
- Name:
- WONG Lawrence, D.
- Address:
- United States (US)
Priority
- Priority Number:
- 747701
- Priority Date:
- 20/12/2000
- Priority Country:
- United States (US)
Classification
- Main IPC Class:
- H01L 21/768;
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