Patent details

EP1623431 Title: A NON-VOLATILE MEMORY HAVING A BIAS ON THE SOURCE ELECTRODE FOR HCI PROGRAMMING

Basic Information

Publication number:
EP1623431
PCT Application Number:
PCT/US/2004/011870
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP047605548
PCT Publication Number:
WO/2004/100216
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
A NON-VOLATILE MEMORY HAVING A BIAS ON THE SOURCE ELECTRODE FOR HCI PROGRAMMING
French Title of Invention:
MEMOIRE NON VOLATILE PRESENTANT UNE POLARISATION SUR L'ELECTRODE SOURCE POUR LA PROGRAMMATION HCI
German Title of Invention:
NICHTFLÜCHTIGER SPEICHER MIT EINER VORSPANNUNG AUF DER SOURCE-ELEKTRODE FÜR HCI-PROGRAMMIERUNG
SPC Number:

Dates

Filing date:
16/04/2004
Grant date:
21/10/2009
EP Publication Date:
21/10/2009
PCT Publication Date:
18/11/2004
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
08/02/2006
EP B1 Publication Date:
21/10/2009
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
16/04/2010
Expiration date:
16/04/2024
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
16/04/2004
 
 

Name:
Freescale Semiconductor Inc.
Address:
6501 William Cannon Drive, Austin, Texas 78735, United States (US)

Inventor

1

Name:
CHINDALORE Gowrishankar
Address:
United States (US)

2

Name:
CHOY Jon, S.
Address:
United States (US)

Priority

Priority Number:
426282
Priority Date:
30/04/2003
Priority Country:
United States (US)

Classification

Main IPC Class:
G11C 16/10;
Filing date Document type Number of pages