Patent details

EP2266310 Title: CMOS IMAGE SENSOR WITH IMPROVED FILL-FACTOR AND REDUCED DARK CURRENT

Basic Information

Publication number:
EP2266310
PCT Application Number:
PCT/US/2009/035943
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP097212328
PCT Publication Number:
WO/2009/117245
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
CMOS IMAGE SENSOR WITH IMPROVED FILL-FACTOR AND REDUCED DARK CURRENT
French Title of Invention:
CAPTEUR D'IMAGE CMOS AVEC FACTEUR DE REMPLISSAGE AMÉLIORÉ ET COURANT D'OBSCURITÉ RÉDUIT
German Title of Invention:
CMOS-BILDSENSOR MIT VERBESSERTEM FÜLLFAKTOR UND REDUZIERTEM DUNKELSTROM
SPC Number:

Dates

Filing date:
04/03/2009
Grant date:
15/07/2015
EP Publication Date:
15/07/2015
PCT Publication Date:
24/09/2009
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
29/12/2010
EP B1 Publication Date:
15/07/2015
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
04/03/2016
Expiration date:
04/03/2029
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
04/03/2009
 
 

Name:
BAE Systems Imaging Solutions Inc.
Address:
1841 Zanker Road, Suite 50, San Jose, CA 95112, United States (US)

Inventor

Name:
LIU XinQiao
Address:
United States (US)

Priority

Priority Number:
49901
Priority Date:
17/03/2008
Priority Country:
United States (US)

Classification

Main IPC Class:
H04N 5/335;

Annual Fees

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