Patent details
EP2657375 Title: SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE
Basic Information
- Publication number:
- EP2657375
- PCT Application Number:
- JP2011064876
- Type:
- European Patent Granted for LU
- Legal Status:
- Lapsed
- Application number:
- EP118507227
- PCT Publication Number:
- WO2012086238
- First applicant's nationality:
- Translation Language:
- EPO Publication Language:
- English
- English Title of Invention:
- SEED MATERIAL FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE
- French Title of Invention:
- SUBSTANCE DE GERME POUR CROISSANCE ÉPITAXIALE EN PHASE LIQUIDE DU CARBURE DE SILICIUM MONOCRISTALLIN, ET PROCÉDÉ DE CROISSANCE ÉPITAXIALE EN PHASE LIQUIDE DU CARBURE DE SILICIUM MONOCRISTALLIN
- German Title of Invention:
- KRISTALLISATIONSKEIM ZUR FLÜSSIGPHASENEPITAXIE VON MONOKRISTALLINEM SILICIUMCARBID UND VERFAHREN ZUR FLÜSSIGPHASENEPITAXIE VON MONOKRISTALLINEM SILICIUMCARBID
- SPC Number:
Dates
- Filing date:
- 29/06/2011
- Grant date:
- 08/08/2018
- EP Publication Date:
- 30/10/2013
- PCT Publication Date:
- 28/06/2012
- Claims Translation Received Date:
- Translations Received Date (B1 EP Publication):
- Translations Received Date (B2 EP Publication):
- Translations Received Date (B3 EP Publication):
- Publication date:
- 08/08/2018
- EP B1 Publication Date:
- 08/08/2018
- EP B2 Publication Date:
- EP B3 Publication Date:
- Lapsed date:
- 29/06/2019
- Expiration date:
- 29/06/2031
- Renunciation date:
- Revocation date:
- Annulment date:
Owner
- From:
- 01/08/2018
- Name:
- Toyo Tanso Co., Ltd.
- Address:
- 5-7-12, Takeshima Nishiyodogawa-ku, Osaka-shi Osaka 555-0011, Japan (JP)
Inventor
1
- Name:
- TORIMI, Satoshi
- Address:
- Japan (JP)
2
- Name:
- NOGAMI, Satoru
- Address:
- Japan (JP)
3
- Name:
- MATSUMOTO, Tsuyoshi
- Address:
- Japan (JP)
Priority
1
- Priority Number:
- 2010288477
- Priority Date:
- 24/12/2010
- Priority Country:
- Japan (JP)
2
- Priority Number:
- 2010288473
- Priority Date:
- 24/12/2010
- Priority Country:
- Japan (JP)
3
- Priority Number:
- 2010288470
- Priority Date:
- 24/12/2010
- Priority Country:
- Japan (JP)
4
- Priority Number:
- 2010288467
- Priority Date:
- 24/12/2010
- Priority Country:
- Japan (JP)
Classification
- IPC classification:
- C30B 19/12; C30B 28/14; C30B 29/36;
Publication
European Patent Bulletin
- Issue number:
- 201832
- Publication date:
- 08/08/2018
- Description:
- Grant (B1)
Annual Fees
- Annual Fee Due Date:
- Annual Fee Number:
- Expected Payer:
- Last Annual Fee Payment Date:
- Last Annual Fee Paid Number:
- Payer:
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