Patent details

EP2924737 Title: Semiconductor wafer, method for manufacturing light receiving sensor, and light receiving sensor

Basic Information

Publication number:
EP2924737
PCT Application Number:
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP151610466
PCT Publication Number:
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
Semiconductor wafer, method for manufacturing light receiving sensor, and light receiving sensor
French Title of Invention:
TRANCHE DE SEMI-CONDUCTEUR, PROCÉDÉ DE FABRICATION D'UN CAPTEUR DE RÉCEPTION DE LUMIÈRE ET LEDIT CAPTEUR
German Title of Invention:
HALBLEITERWAFER, VERFAHREN ZUR HERSTELLUNG EINES LICHTEMPFANGSSENSORS UND LICHTEMPFANGSSENSOR
SPC Number:

Dates

Filing date:
26/03/2015
Grant date:
07/12/2016
EP Publication Date:
07/12/2016
PCT Publication Date:
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
30/09/2015
EP B1 Publication Date:
07/12/2016
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
26/03/2017
Expiration date:
26/03/2035
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
26/03/2015
 
 

Name:
Seiko Epson Corporation
Address:
4-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0811, Japan (JP)

Inventor

1

Name:
Uematsu Akira
Address:
Japan (JP)

2

Name:
Matsuo Atsushi
Address:
Japan (JP)

Priority

Priority Number:
2014067766
Priority Date:
28/03/2014
Priority Country:
Japan (JP)

Classification

Main IPC Class:
H01L 27/146;

Annual Fees

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