Patent details

EP2973578 Title: WRITE-ASSISTED MEMORY WITH ENHANCED SPEED

Basic Information

Publication number:
EP2973578
PCT Application Number:
PCT/US/2014/022752
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP147130116
PCT Publication Number:
WO/2014/159262
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
WRITE-ASSISTED MEMORY WITH ENHANCED SPEED
French Title of Invention:
MÉMOIRE À ÉCRITURE ASSISTÉE AVEC VITESSE AMÉLIORÉE
German Title of Invention:
SCHREIBUNTERSTÜTZTER SPEICHER MIT ERHÖHTER GESCHWINDIGKEIT
SPC Number:

Dates

Filing date:
10/03/2014
Grant date:
05/10/2016
EP Publication Date:
05/10/2016
PCT Publication Date:
02/10/2014
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
20/01/2016
EP B1 Publication Date:
05/10/2016
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
10/03/2017
Expiration date:
10/03/2034
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
10/03/2014
 
 

Name:
Qualcomm Incorporated
Address:
5775 Morehouse Drive, San Diego, CA 92121-1714, United States (US)

Inventor

1

Name:
AHMED Fahad
Address:
United States (US)

2

Name:
JIN Peng
Address:
United States (US)

3

Name:
ABU-RAHMA Mohamed, Hassan
Address:
United States (US)

Priority

Priority Number:
201313799532
Priority Date:
13/03/2013
Priority Country:
United States (US)

Classification

Main IPC Class:
G11C 11/419;

Annual Fees

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Expected Payer:
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Payer:
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