Patent details

EP3192898 Title: METHOD FOR PRODUCING SILICON CARBIDE CRYSTALS

Basic Information

Publication number:
EP3192898
PCT Application Number:
JP2015075711
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP158397711
PCT Publication Number:
WO2016039415
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
METHOD FOR PRODUCING SILICON CARBIDE CRYSTALS
French Title of Invention:
PROCÉDÉ DE PRODUCTION DE CRISTAUX DE CARBURE DE SILICIUM
German Title of Invention:
VERFAHREN ZUM HERSTELLEN VON SILICIUMCARBIDKRISTALLEN
SPC Number:

Dates

Filing date:
10/09/2015
Grant date:
06/11/2019
EP Publication Date:
19/07/2017
PCT Publication Date:
17/03/2016
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
06/11/2019
EP B1 Publication Date:
06/11/2019
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
10/09/2020
Expiration date:
10/09/2035
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
30/10/2019
 
 

Name:
Central Glass Co., Ltd.
Address:
5253, Oaza Okiube, Ube-shi, Yamaguchi 755-0001, Japan (JP)

Name:
National University Corporation Nagoya University
Address:
1, Furo-cho Chikusa-ku, Nagoya-shi, Aichi 464-8601, Japan (JP)

Inventor

1

Name:
KOIKE Daiki
Address:
Japan (JP)

2

Name:
UJIHARA Toru
Address:
Japan (JP)

3

Name:
UMEZAKI Tomonori
Address:
Japan (JP)

4

Name:
HARADA Shunta
Address:
Japan (JP)

Priority

Priority Number:
2014184978
Priority Date:
11/09/2014
Priority Country:
Japan (JP)

Classification

IPC classification:
C30B 19/06; C30B 19/12; C30B 29/36;

Publication

European Patent Bulletin

Issue number:
201945
Publication date:
06/11/2019
Description:
Grant (B1)

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