Patent details

EP3214649 Title: ANTI-FUSE MEMORY AND SEMICONDUCTOR STORAGE DEVICE

Basic Information

Publication number:
EP3214649
PCT Application Number:
JP2015078732
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP158557447
PCT Publication Number:
WO2016067895
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
ANTI-FUSE MEMORY AND SEMICONDUCTOR STORAGE DEVICE
French Title of Invention:
MÉMOIRE ANTI-FUSIBLE ET DISPOSITIF DE STOCKAGE À SEMI-CONDUCTEUR
German Title of Invention:
ANTIFUSE-SPEICHER UND HALBLEITERSPEICHERVORRICHTUNG
SPC Number:

Dates

Filing date:
09/10/2015
Grant date:
11/03/2020
EP Publication Date:
06/09/2017
PCT Publication Date:
06/05/2016
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
11/03/2020
EP B1 Publication Date:
11/03/2020
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
09/10/2020
Expiration date:
09/10/2035
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
04/03/2020
 
 

Name:
Floadia Corporation
Address:
30-9, Ogawahigashicho 1-chome, Kodaira-shi, Tokyo 187-0031, Japan (JP)

Inventor

1

Name:
SHINAGAWA Yutaka
Address:
Japan (JP)

2

Name:
TANIGUCHI Yasuhiro
Address:
Japan (JP)

3

Name:
KAWASHIMA Yasuhiko
Address:
Japan (JP)

4

Name:
SAKURAI Ryotaro
Address:
Japan (JP)

5

Name:
OKUYAMA Kosuke
Address:
Japan (JP)

6

Name:
KASAI Hideo
Address:
Japan (JP)

Priority

Priority Number:
2014223793
Priority Date:
31/10/2014
Priority Country:
Japan (JP)

Classification

IPC classification:
G11C 16/02; G11C 16/06; G11C 17/06; G11C 17/16; G11C 17/18; H01L 23/525; H01L 27/10; H01L 27/112; H01L 27/115;

Publication

European Patent Bulletin

Issue number:
202011
Publication date:
11/03/2020
Description:
Grant (B1)

Annual Fees

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