Patent details
EP1328970 Title: METHOD FOR PRODUCING A DMOS TRANSISTOR
Basic Information
- Publication number:
- EP1328970
- PCT Application Number:
- PCT/EP/2001/012035
- Type:
- European Patent Granted for LU
- Legal Status:
- Lapsed
- Application number:
- EP019889484
- PCT Publication Number:
- WO/2002/035600
- First applicant's nationality:
- Translation Language:
- EPO Publication Language:
- German
- English Title of Invention:
- METHOD FOR PRODUCING A DMOS TRANSISTOR
- French Title of Invention:
- PROCEDE DE FABRICATION D'UN TRANSISTOR DMOS
- German Title of Invention:
- VERFAHREN ZUR HERSTELLUNG EINES DMOS-TRANSISTORS
- SPC Number:
Dates
- Filing date:
- 17/10/2001
- Grant date:
- 20/12/2006
- EP Publication Date:
- 20/12/2006
- PCT Publication Date:
- 02/05/2002
- Claims Translation Received Date:
- Translations Received Date (B1 EP Publication):
- Translations Received Date (B2 EP Publication):
- Translations Received Date (B3 EP Publication):
- Publication date:
- 23/07/2003
- EP B1 Publication Date:
- 20/12/2006
- EP B2 Publication Date:
- EP B3 Publication Date:
- Lapsed date:
- 17/10/2007
- Expiration date:
- 17/10/2021
- Renunciation date:
- Revocation date:
- Annulment date:
Owner
- From:
- 17/10/2001
- Name:
- Infineon Technologies AG
- Address:
- St.-Martin-Strasse 53, 81669 München, Germany (DE)
Inventor
1
- Name:
- ROESCHLAU Klaus
- Address:
- Germany (DE)
2
- Name:
- WAGNER Cajetan
- Address:
- Germany (DE)
3
- Name:
- MUELLER Karlheinz
- Address:
- Germany (DE)
Priority
- Priority Number:
- 10053428
- Priority Date:
- 27/10/2000
- Priority Country:
- Germany (DE)
Classification
- Main IPC Class:
- H01L 21/336;
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