Patent details

EP1345844 Title: SOI/GLASS PROCESS FOR FORMING THIN SILICON MICROMACHINED STRUCTURES

Basic Information

Publication number:
EP1345844
PCT Application Number:
PCT/US/2001/050089
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP019933340
PCT Publication Number:
WO/2002/057180
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
SOI/GLASS PROCESS FOR FORMING THIN SILICON MICROMACHINED STRUCTURES
French Title of Invention:
PROCEDE SOI/VERRE DE FORMATION DE STRUCTURES MINCES DE SILICIUM MICRO-USINEES
German Title of Invention:
SOI/GLAS-VERFAHREN ZUR HERSTELLUNG VON DÜNNEN MIKROBEARBEITETEN STRUKTUREN
SPC Number:

Dates

Filing date:
20/12/2001
Grant date:
04/11/2009
EP Publication Date:
04/11/2009
PCT Publication Date:
25/07/2002
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
24/09/2003
EP B1 Publication Date:
04/11/2009
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
20/12/2009
Expiration date:
20/12/2021
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
20/12/2001
 
 

Name:
Honeywell International Inc.
Address:
101 Columbia Road P.O. Box 2245, Morristown NJ 07960, United States (US)

Inventor

1

Name:
CABUZ Cleopatra
Address:
United States (US)

2

Name:
RIDLEY Jeffrey, Alan
Address:
United States (US)

Priority

Priority Number:
748488
Priority Date:
27/12/2000
Priority Country:
United States (US)

Classification

Main IPC Class:
B81C 1/00;
Filing date Document type Number of pages