Patent details
EP1494271 Title: METHOD FOR DICING SUBSTRATE
Basic Information
- Publication number:
- EP1494271
- PCT Application Number:
- PCT/JP/2003/002669
- Type:
- European Patent Granted for LU
- Legal Status:
- Lapsed
- Application number:
- EP037440039
- PCT Publication Number:
- WO/2003/077295
- First applicant's nationality:
- Translation Language:
- EPO Publication Language:
- Not available
- English Title of Invention:
- METHOD FOR DICING SUBSTRATE
- French Title of Invention:
- PROCEDE PERMETTANT DE DECOUPER UN SUBSTRAT EN PUCES
- German Title of Invention:
- VERFAHREN ZUM AUFTRENNEN EINES SUBSTRATS
- SPC Number:
Dates
- Filing date:
- 06/03/2003
- Grant date:
- 16/11/2011
- EP Publication Date:
- 16/11/2011
- PCT Publication Date:
- 18/09/2003
- Claims Translation Received Date:
- Translations Received Date (B1 EP Publication):
- Translations Received Date (B2 EP Publication):
- Translations Received Date (B3 EP Publication):
- Publication date:
- 05/01/2005
- EP B1 Publication Date:
- 16/11/2011
- EP B2 Publication Date:
- EP B3 Publication Date:
- Lapsed date:
- 06/03/2012
- Expiration date:
- 06/03/2023
- Renunciation date:
- Revocation date:
- Annulment date:
Owner
- From:
- 06/03/2003
- Name:
- HAMAMATSU PHOTONICS K.K.
- Address:
- 1126-1 Ichino-cho, Hamamatsu-shi, Shizuoka-ken 435-8558, Japan (JP)
Inventor
1
- Name:
- UCHIYAMA Naoki, c/o Hamamatsu Photonics K.K.
- Address:
- Japan (JP)
2
- Name:
- FUKUMITSU Kenshi, c/o Hamamatsu Photonics K.K.
- Address:
- Japan (JP)
3
- Name:
- FUJII Yoshimaro, c/o Hamamatsu Photonics K.K.
- Address:
- Japan (JP)
4
- Name:
- FUKUYO Fumitsugu, c/o Hamamatsu Photonics K.K.
- Address:
- Japan (JP)
Priority
- Priority Number:
- 2002067289
- Priority Date:
- 12/03/2002
- Priority Country:
- Japan (JP)
Classification
- Main IPC Class:
- H01L 21/78;
| Filing date | Document type | Number of pages |
|---|