Patent details
EP2269219 Title: HIGH FREQUENCY FIELD-EFFECT TRANSISTOR
Basic Information
- Publication number:
- EP2269219
- PCT Application Number:
- PCT/IB/2009/051568
- Type:
- European Patent Granted for LU
- Legal Status:
- Lapsed
- Application number:
- EP097332415
- PCT Publication Number:
- WO/2009/128035
- First applicant's nationality:
- Translation Language:
- EPO Publication Language:
- English
- English Title of Invention:
- HIGH FREQUENCY FIELD-EFFECT TRANSISTOR
- French Title of Invention:
- TRANSISTOR À EFFET DE CHAMP ET À HAUTE FRÉQUENCE
- German Title of Invention:
- HOCHFREQUENZ-FELDEFFEKTTRANSISTOR
- SPC Number:
Dates
- Filing date:
- 15/04/2009
- Grant date:
- 25/01/2012
- EP Publication Date:
- 25/01/2012
- PCT Publication Date:
- 22/10/2009
- Claims Translation Received Date:
- Translations Received Date (B1 EP Publication):
- Translations Received Date (B2 EP Publication):
- Translations Received Date (B3 EP Publication):
- Publication date:
- 05/01/2011
- EP B1 Publication Date:
- 25/01/2012
- EP B2 Publication Date:
- EP B3 Publication Date:
- Lapsed date:
- 15/04/2012
- Expiration date:
- 15/04/2029
- Renunciation date:
- Revocation date:
- Annulment date:
Owner
- From:
- 15/04/2009
- Name:
- NXP B.V.
- Address:
- High Tech Campus 60, 5656 AG Eindhoven, Netherlands (NL)
Inventor
- Name:
- TIEMEIJER Lukas Frederik
- Address:
- Netherlands (NL)
Priority
1
- Priority Number:
- 08103544
- Priority Date:
- 15/04/2008
- Priority Country:
- European Patent Office (EPO) (EP)
2
- Priority Number:
- 08166767
- Priority Date:
- 16/10/2008
- Priority Country:
- European Patent Office (EPO) (EP)
Classification
- Main IPC Class:
- H01L 23/482;
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