Patent details

EP3158599 Title: POROUS SILICON ELECTRODE AND METHOD

Basic Information

Publication number:
EP3158599
PCT Application Number:
US2015036719
Type:
European Patent Granted for LU
Legal Status:
Lapsed
Application number:
EP158089003
PCT Publication Number:
WO2015196088
First applicant's nationality:
Translation Language:
EPO Publication Language:
English
English Title of Invention:
POROUS SILICON ELECTRODE AND METHOD
French Title of Invention:
ÉLECTRODE DE SILICIUM POREUX ET PROCÉDÉ ASSOCIÉ
German Title of Invention:
PORÖSE SILICIUMELEKTRODE UND VERFAHREN
SPC Number:

Dates

Filing date:
19/06/2015
Grant date:
05/06/2019
EP Publication Date:
26/04/2017
PCT Publication Date:
23/12/2015
Claims Translation Received Date:
Translations Received Date (B1 EP Publication):
Translations Received Date (B2 EP Publication):
Translations Received Date (B3 EP Publication):
Publication date:
05/06/2019
EP B1 Publication Date:
05/06/2019
EP B2 Publication Date:
EP B3 Publication Date:
Lapsed date:
19/06/2019
Expiration date:
19/06/2035
Renunciation date:
Revocation date:
Annulment date:

Owner

From:
29/05/2019
 
 

Name:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Address:
1111 Franklin Street, 12th Floor, Oakland CA 94607-5200, United States (US)

Inventor

1

Name:
FAVORS, Zachary
Address:
United States (US)

2

Name:
OZKAN, Mihrimah
Address:
United States (US)

3

Name:
OZKAN, Cengiz S.
Address:
United States (US)

Priority

Priority Number:
201462015019 P
Priority Date:
20/06/2014
Priority Country:
United States (US)

Classification

IPC classification:
C01B 33/023; H01M 4/02; H01M 4/08; H01M 4/36; H01M 4/38; H01M 4/62; H01M 4/13; H01M 4/134; H01M 4/1395; H01M 10/052; H01M 10/0525; H01M 10/0569; C01B 32/05;

Publication

European Patent Bulletin

Issue number:
201923
Publication date:
05/06/2019
Description:
Grant (B1)

Annual Fees

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